AUIRLR3636 Datasheet, PDF (1/12 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology

AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D
G
S
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
Gate
PD - 97700
AUIRLR3636
HEXFET^® Power MOSFET
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
60V
c ^56..48mm::
99A
50A
D
S
G
D-Pak
AUIRLR3636
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally Limited)
d Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Max.
99 c
70 c
50
396
143
0.95
±16
170
See Fig.14, 15, 22a, 22b
22
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/13/11