AUIRLR3410 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

AUTOMOTIVE GRADE
AUIRLR3410
Features
l Advanced Planar Technology
l Low On-Resistance
l Logic Level Gate Drive
l Dynamic dV/dT Rating
l 175°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
HEXFET^® Power MOSFET
D
V_(BR)DSS
100V
R_DS(on) max.
105mΩ
S
I_D
17A
D
S
G
D-Pak
AUIRLR3410
G
Gate
D
Drain
S
Source
Base Part Number
AUIRLR3410
Package Type
D-pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
3000
Orderable Part Number
AUIRLR3410
AUIRLR3410TR
AUIRLR3410TRL
AUIRLR3410TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
17
12
A
60
79
W
0.53
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
dg Single Pulse Avalanche Energy (Thermally Limited)
Ùg Avalanche Current
™g Repetitive Avalanche Energy
e Peak Diode Recovery
± 16
150
9.0
7.9
5.0
V
mJ
A
mJ
V/ns
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
Parameter
R_θJC
R_θJA
j Junction-to-Case
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 17, 2014