AUIRLR3114Z Datasheet, PDF (1/14 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
Features
l Advanced Process Technology
D
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Logic Level
l Lead-Free, RoHS Compliant
S
l Automotive Qualified *
PD - 96381
AUIRLR3114Z
AUIRLU3114Z
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max @ 10V
max @ 4.5V
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
4.9mΩ
6.5mΩ
k 130A
42A
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
D
S
G
D-Pak
AUIRLR3114Z
S
D
G
I-Pak
AUIRLU3114Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A)
is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
™ Pulsed Drain Current
P_D @T_C = 25°C
Power Dissipation
Linear Derating Factor
V_GS
E_{AS (Thermally limited)}
E_AS (Tested )
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θJA
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Max.
130 k
89 k
42
500
140
0.95
±16
130
260
See Fig.12a, 12b, 15, 16
-55 to + 175
300(1.6mm from case)
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11