AUIRLR3105 Datasheet, PDF (1/13 Pages) International Rectifier – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
PD - 97703A
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Dynamic dV/dT Rating
l Low On-Resistance
l 175°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
AUIRLR3105
HEXFET^® Power MOSFET
D
V_(BR)DSS
R_DS(on) typ.
max
S
I_D
55V
30mΩ
37mΩ
25A
G
Gate
D
S
G
D-Pak
AUIRLR3105
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
I_DM
c Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
d Avalanche Current
d Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
R_θJC
k Junction-to-Case
R_θJA
j Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Max.
25
18
100
57
0.38
± 16
61
94
See Fig. 12a, 12b, 15, 16
3.4
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.65
50
110
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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