AUIRLR2908 Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 97734
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
AUIRLR2908
HEXFET^® Power MOSFET
D
V_(BR)DSS
80V
R_DS(on) typ.
22.5m
max
I_{D (Silicon Limited)}
k ^28m
39A
S
I_{D (Package Limited)}
30A
G
Gate
D
S
G
D-Pak
AUIRLR2908
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
39k
Units
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
28
A
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
30
I_DM
c Pulsed Drain Current
150
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
120
0.77
W
W/°C
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
± 16
180
250
See Fig. 12a, 12b, 15, 16
2.3
V
mJ
A
mJ
V/ns
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
Parameter
R_JC
l Junction-to-Case
R_JA
j Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
1.3
40
Units
°C/W
R_JA
Junction-to-Ambient
–––
110
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/17/11