AUIRLR2905Z Datasheet, PDF (1/13 Pages) International Rectifier – Specifically designed for Automotive applications

AUTOMOTIVE GRADE
PD - 97583
Features
● Logic Level
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
AUIRLR2905Z
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
R_DS(on) max. 13.5mΩ
G
I_{D (Silicon Limited)}
60A
S
I_{D (Package Limited)}
42A
D
S
G
D-Pak
AUIRLR2905Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V (Silicon Limited)}
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C _{Power Dissipation}
Linear Derating Factor
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θJA
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Max.
60
43
42
240
110
0.72
± 16
57
85
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/28/2010