AUIRLR2905 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology

AUTOMOTIVE GRADE
AUIRLR2905
AUIRLU2905
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
G
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
R_DS(on) max.
27m
S
I_D
42A
D
S
G
D-Pak
AUIRLRU2905
S
D
I-Pak ^G
AUIRLU2905
G
Gate
D
Drain
S
Source
Base part number Package Type
Standard Pack
Complete Part Number
AUIRLR2905
AUIRLU2905
Dpak
Ipak
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
AUIRLR2905
AUIRLR2905TR
AUIRLR2905TRL
AUIRLR2905TRR
AUIRLU2905
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™ Pulsed Drain Current
Power Dissipation
Linear Derating Factor
42
30
A
160
110
W
0.71
W/°C
V_GS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
™ Repetitive Avalanche Energy
± 16
V
210
mJ
200
25
A
11
mJ
T_J
T_STG
Operating Junction and
-55 to + 175
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2012 International Rectifier
June 5, 2012 PD-97623A