AUIRLR120N Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

AUTOMOTIVE GRADE
PD - 97624
AUIRLR120N
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175ºC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
G
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
HEXFET^® Power MOSFET
D
V_(BR)DSS
R_DS(on) max.
S
I_D
100V
0.185Ω
10A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
Gate
D
S
G
D-Pak
AUIRLR120N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
10
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
I_DM
™ Pulsed Drain Current
7.0
A
35
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
48
W
0.32
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
Ù Avalanche Current
™ Repetitive Avalanche Energy
e Peak Diode Recovery
± 16
V
85
mJ
6.0
A
4.8
mJ
5.0
V/ns
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
Parameter
R_θJC
g Junction-to-Case
R_θJA
Junction-to-Ambient (PCB mount) **
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/19/11