AUIRLL024Z Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Process Technology

PD - 97762
AUTOMOTIVE GRADE
AUIRLL024Z
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 150°C Operating Temperature
● Fast Switching
G
● Repetitive Avalanche Allowed up to
Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
R_DS(on) typ. 48m_
max. 60m
S
I_D
5.0A
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
G
Gate
D
S
D
G
SOT-223
AUIRLL024Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
Parameter
i Continuous Drain Current, V_GS @ 10V
i Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
i Power Dissipation
j Power Dissipation
i Linear Derating Factor
Max.
5.0
4.0
40
2.8
1.0
0.02
Units
A
W
W/°C
V_GS
Gate-to-Source Voltage
± 16
V
E_AS
d Single Pulse Avalanche Energy (Thermally Limited)
21
mJ
E_AS (tested )
h Single Pulse Avalanche Energy Tested Value
38
I_AR
Ù Avalanche Current
See Fig.12a, 12b, 15, 16
A
E_AR
g Repetitive Avalanche Energy
mJ
T_J
Operating Junction and
-55 to + 150
T_STG
Storage Temperature Range
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R_JA
i Junction-to-Ambient (PCB mount, steady state)
–––
45
°C/W
R_JA
j Junction-to-Ambient (PCB mount, steady state)
–––
120
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/28/12