AUIRLI2505 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology

AUTOMOTIVE GRADE
PD - 97766
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rug-
gedized device design that HEXFET power
MOSFETs are well known for, provides the de-
signer with an extremely efficient and reliable de-
vice for use in Automotive and a wide variety of
other applications.
AUIRLI2505
HEXFET^® Power MOSFET
V_(BR)DSS
55V
R_DS(on) max. 8.0m
I_D
58A
S
D
G
TO-220AB Full-Pak
AUIRLI2505
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
I_DM
ch Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
dh Single Pulse Avalanche Energy (Thermally Limited)
ch Avalanche Current
e Repetitive Avalanche Energy
eh Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_JC
i Junction-to-Case
R_JA
Junction-to-Ambient
58
41
360
63
0.42
± 16
500
54
6.3
5.0
-55 to + 175
y y ³⁰⁰
10 lbf in (1.1N m)
Typ.
–––
–––
Max.
2.4
65
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/14/12