AUIRL7736M2 Datasheet, PDF (1/11 Pages) International Rectifier – DirectFETPower MOSFET

PD - 97656
AUTOMOTIVE GRADE _{AUIRL7736M2TR}
• Logic Level
• Advanced Process Technology
• Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
AUIRL7736M2TR1
DirectFET^® Power MOSFET ‚
V_(BR)DSS
R_DS(on) typ.
40V
2.2mΩ
max.
3.0mΩ
I_{D (Silicon Limited)}
112A
Q_g
52nC
S
S
D
G
D
S
S
Applicable DirectFET Outline and Substrate Outline 
M4
DirectFET^® ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRL7736M2 combines the latest Automotive HEXFET^® Power MOSFET Silicon technology with the advanced DirectFET^® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET^® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET^® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET^® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET^®
packaging platform coupled with the latest silicon technology allows the AUIRL7736M2 to offer substantial system level savings and performance
improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The
AUIRL7736M2 can be utilized together with the AUIRL7732S2 as a sync/control MOSFET pair in a buck converter topology. This MOSFET
utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are
175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly
efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
E_AS
E_AS (tested)
I_AR
E_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
i Pulsed Drain Current
f Power Dissipation
e Power Dissipation
h Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ãg Avalanche Current
g Repetitive Avalanche Energy
T_P
Peak Soldering Temperature
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJCan
R_θJ-PCB
e Junction-to-Ambient
j Junction-to-Ambient
k Junction-to-Ambient
fl Junction-to-Can
Parameter
f ^{Junction-to-PCB Mounted}
Linear Derating Factor
Max.
40
± 16
112
79
179
22
450
63
2.5
68
119
See Fig. 18a,18b,16,17
260
-55 to + 175
Typ.
–––
12.5
20
–––
1.0
Max.
60
–––
–––
2.4
–––
0.42
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
1
04/07/11