AUIRL3705Z Datasheet, PDF (1/15 Pages) International Rectifier – Logic Level Advanced Process Technology

AUTOMOTIVE GRADE
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
G
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
PD - 96345
AUIRL3705Z
AUIRL3705ZS
AUIRL3705ZL
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
R_DS(on) typ. 6.5mΩ
max. 8.0mΩ
l I_{D (Silicon Limited)} 86A
S
I_{D (Package Limited)} 75A
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
AUIRL3705Z
D²Pak
TO-262
AUIRL3705ZS AUIRL3705ZL
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
™ ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (Tested )
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy(Thermally limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
k Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
Max.
86l
61
75
340
130
0.88
± 16
120
180
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.14
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/09/10