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AUIRGPS4067D1 Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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AUTOMOTIVE GRADE
PD - 97726C
AUIRGPS4067D1
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
ï· Low VCE (on) Trench IGBT Technology
ï· Low Switching Losses
ï· 6μs SCSOA
ï· Square RBSOA
ï· 100% of the parts tested for ILM Â
ï· Positive VCE (on) Temperature Coefficient
ï· Soft Recovery Co-pak Diode
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
C
G
E
n-channel
VCES = 600V
IC = 160A, TC = 100°C
tSC ï³ï 6μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V
C
Benefits
ï· High Efficiency in a Wide Range of Applications
ï· Suitable for Applications in the Low to Mid-Rrange
Frequencies
ï· Rugged Transient Performance for Increased Reliability
ï· Excellent Current Sharing in Parallel Operation
ï· Low EMI
E
C
G
Super-247
AUIRGPS4067D1
G
C
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF NOMINAL
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
c Clamped Inductive Load Current, VGE = 20V
d Diode Nominal Current
d Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
Rï±JC (IGBT)
Rï±JC (Diode)
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT)
f Thermal Resistance Junction-to-Case-(each Diode)
Rï±CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
Rï±JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
*Qualification standards can be found at http://www.irf.com/
1
600
V
240g
160
120
360
480
A
120g
480
±20
V
±30
750
W
375
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Min.
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.24
40
Max.
0.20
0.44
âââ
âââ
Units
°C/W
www.irf.com
09/27/2012
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