AUIRGP65G40D0 Datasheet, PDF (1/15 Pages) International Rectifier – ULTRAFAST IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

AUTOMOTIVE GRADE
AUIRGP65G40D0
AUIRGF65G40D0
CooliRIGBT ™
Features
• Designed And Qualified for Automotive Applications
• Ultra Fast Switching IGBT:70-200kHz
• Extremely Low Switching Losses
• Maximum Junction Temperature 175 °C
• Square RBSOA
• Positive V_{CE (on)} Temperature Coefficient
ULTRAFAST IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C
G
E
n-channel
V_CES = 600V
V_CE(on) typ. = 1.8V
I_C@T_C=100°C = 41A
T_J max = 175°C
Benefits
• Optimized High Frequency Switching Applications
• Rugged Transient Performance for Increased
Reliability
• Excellent Current Sharing in Parallel Operation
Applications
• DC-DC Converter
• PFC
E
GC
TO-247AC
AUIRGP65G40D0
G
G a te
C
C o lle c to r
G ^CE
TO-247AD
AUIRGF65G40D0
E
E m itte r
Base part number
Package Type
Standard Pack
O rderable Part Number
Form
Q u an t it y
AUIRG P65G40D0
TO -247AC
Tube
25
AUIRG P65G40D0
AUIRG F65G40D0
TO -247AD
Tube
25
AUIRG F65G40D0
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
V _{CE S}
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_{NOMINA L}
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FRM
V _GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_{ST G}
Collector-to-Emitter Voltage
h Continuous Collector Current
h Continuous Collector Current
i Nominal Current @ 200kHz
Pulse Collector Current
c Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
d Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
600
V
62
41
20
A
84
112
46.1
30
112
±20
V
625
W
313
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
R_θJC (IGBT)
R_θJC (Diode)
R_θCS
R_θJA
Parameter
f Junction-to-Case-(each IGBT)
f Junction-to-Case-(each Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.24
1.78
–––
40
Units
°C/W
–––
6.0 (0.21)
–––
g (oz)
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2015 International Rectifier
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September 8, 2015