AUIRGP50B60PD1 Datasheet, PDF (1/14 Pages) International Rectifier – WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

AUTOMOTIVE GRADE
PD - 96306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Automotive HEV and EV
• PFC and ZVS SMPS Circuits
Features
• Low V_CE(ON) NPT Technology, Positive Temperature
Coefficient
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
C
G
E
n-channel
V_CES = 600V
V_CE(on) typ. = 2.00V
@ V_GE = 15V I_C = 33A
Equivalent MOSFET
Parameters
R_CE(on) typ. = 61mΩ
I_D (FET equivalent) = 50A
E
C
G
TO-247AC
AUIRGP50B60PD1
G
C
E
C
G
TO-247AD
AUIRGP50B60PD1E
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless
otherwise specified.
Parameter
Max.
Units
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FRM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
d Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
e Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
600
V
75 h
45
150
150
A
40
15
60
±20
V
390
W
156
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R_θJC (IGBT)
R_θJC (Diode)
R_θCS
R_θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
–––
–––
0.32
–––
–––
1.7
–––
0.24
–––
–––
–––
40
–––
6.0 (0.21)
–––
°C/W
g (oz)
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/02/10