AUIRGP4063D Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

AUTOMOTIVE GRADE
AUIRGP4063D
AUIRGP4063D-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low V_{CE (ON)} Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
G
• Square RBSOA
• 100% of the parts tested for 4X rated current (I_LM)
• Positive V_{CE (ON)} Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
E
n-channel
• Tight parameter distribution
• Lead Free Package
C
V_CES = 600V
I_C = 60A, T_C = 100°C
t_SC 5μs, T_J(max) = 175°C
V_CE(on) typ. = 1.6V
C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V_{CE (ON)} and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
GC ^E
TO-247AC
AUIRGP4063D
GC ^E
TO-247AD
AUIRGP4063D-E
G
Gate
C
Collector
E
Emitter
Base part number
AUIRGP4063D
AUIRGP4063D-E
Package Type
TO-247
TO-247
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
AUIRGP4063D
AUIRGP4063D-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_{ST G}
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V_GE = 15V
c Clamped Inductive Load Current, V_GE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
e Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
100
60
144
192
82
50
192
±20
±30
330
170
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
1
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July 12, 2013