AUIRGP4062D Datasheet, PDF (1/15 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

AUTOMOTIVE GRADE
PD - 97637
AUIRGR4045D
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low V_{CE (on)} Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the parts tested for I_LM
• Positive V_{CE (on)} Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified*
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low V_{CE (ON)} and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
AUIRGU4045D
C
G
E
n-channel
V_CES = 600V
I_C = 6.0A, T_C = 100°C
V_{CE(on) typ.} = 1.7V
C
E
G
D-Pak
AUIRGR4045D
E
C
I-Pak ^G
AUIRGU4045D
G
Gate
C
Colletor
E
Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
V_CES
I_C@ T_C = 25°C
I_C@ T_C = 100°C
I_CM
I_LM
I_F@T_C=25°C
I_F@T_C=100°C
I_FM
V_GE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
c ^{Pulsed Collector Current, VGE = 15V}
Clamped Inductive Load Current, V_GE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
d Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C =25°
P_D @ T_C =100°
T_J
T_STG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJC
R_θJA
e ^Parameter
Junction-to-Case - IGBT
e Junction-to-Case - Diode
g Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
Max.
1.9
6.8
50
110
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
02/14/11