AUIRGP35B60PD-E Datasheet, PDF (1/13 Pages) International Rectifier – WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

AUTOMOTIVE GRADE
PD - 97619
AUIRGP35B60PD-E
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• NPT Technology, Positive Temperature Coefficient
• Lower V_CE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
• Lead-Free, RoHS Compliant
• Automotive Qualified*
Applications
• PFC and ZVS SMPS Circuits
• DC/DC Converter Charger
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150KHz
C
G
E
n-channel
V_CES = 600V
V_CE(on) typ. = 1.85V
@ V_GE = 15V I_C = 22A
Equivalent MOSFET
Parameters
R_CE(on) typ. = 84mΩ
I_D (FET equivalent) = 35A
C
E
C
G
TO-247AD
AUIRGP35B60PD-E
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FRM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
d Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
e Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
600
V
60
34
120
120
A
40
15
60
±20
V
308
W
123
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R_θJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
R_θJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
R_θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
R_θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
6.0 (0.21)
Max.
0.41
1.7
–––
40
–––
Units
°C/W
g (oz)
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
01/11/10