AUIRG7CH80K6B-M Datasheet, PDF (1/3 Pages) International Rectifier – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
PD - 96279
• 100% Tested at Probe *
Features
• Designed for Automotive Application**
• Solderable Front Metal
• Low V_{CE (on)} Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• Short Circuit Rated
• Square RBSOA
• Positive V_{CE (on)} Temperature Coefficient
• Tight Parameter Distribution
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies
due to Low V_{CE (on)} and Low Switching Losses
• Rugged Transient Performance for Increased
Reliability
• Excellent Current Sharing in Parallel Operation
• Enables Double side cooling and higher current density
• Eliminates wire bonds and Improves Reliability
Chip Type
AUIRG7CH80K6B
VCE
1200V
ICn
200A
AUIRG7CH80K6B-M
C
G
E
n-channel
Applications
• Medium/High Power Inverters
• HEV/EV Inverter
Die Size
12 X 12 mm2
Package
Wafer
Mechanical Parameter
Die Size
Emiter Pad Size (Included Gate Pad)
Gate Pad Size
Area Total / Active
Thickness
Wafer Size
Flat Position
Maximum-Possible Chips per Wafer
Passivation Frontside
Front Metal
Backside Metal
Die Bond
Reject Ink Dot Size
Recommended Storage Environment
12.075x12.075
See Die Drawing
Round, 1mm diameter
mm2
144/114
140
µm
150
mm
0
Degrees
89 pcs
Silicon Nitride
Al (4µm), Ti (0.1µm), Ni (0.2µm), Ag (0.6µm)
Al (0.1µm), Ti (0.1µm), Ni (0.4µm), Ag (0.6µm)
Electrically conductive epoxy or solder
0.51mm min (black, center)
Store in original container, in dry Nitrogen,
<6 months at an ambient temperature of 23°C
Note:
* This IR product is 100% tested at wafer level and is manufactured using established, mature and well characterized processes. Due to
restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with a conditional
performance guarantee. The above data sheet is based on IR sample testing under certain predetermined and assumed conditions,
and are provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed package and use
conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured using IR’s established
processes. Programs for customer-specified testing are available upon request. IR has experienced assembly yields of generally 95%
or greater for individual die; however, customer’s results will vary. Estimates such as those described and set forth in this data sheet for
semiconductor die will vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an
equivalent basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable standard
terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which are available
upon request. For customers requiring a particular parameter to be guaranteed, special testing can be carried out or product can
bepurchased as known good die.
** Technology qualified in sup-TO247 package according to AEC-Q101.
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01/12/10