AUIRG4PC40S-E Datasheet, PDF (1/10 Pages) International Rectifier – Insulated Gate Bipolar Transistor

AUTOMOTIVE GRADE
Insulated Gate Bipolar Transistor
Features
 Standard: Optimized for minimum saturation voltage
and low operating frequencies ( < 1kHz)
 Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
 Industry standard TO-247AD package
 Lead-Free
 Automotive Qualified*
C
G
E
n-channel
C
AUIRG4PC40S-E
V_CES = 600V
V_CE(ON) typ. = 1.32V
@ V_GE = 15V, IC = 31A
Benefits
 Generation 4 IGBT's offer highest efficiency available
 IGBT's optimized for specified application conditions
 Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
G
Gate
GCE
AUIRG4PC40S‐E
TO‐247AD
C
Collector
E
Emitter
Base part number
AUIRG4PC40S-E
Package Type
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
AUIRG4PC40S-E
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current 
Clamped Inductive Load Current 
Continuous Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy 
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
60
31
120
120
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
R_JC
Thermal Resistance Junction-to-Case
R_CS
R_JA
Wt
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
* Qualification standard can be found at http:// www.irf.com/
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
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March 31, 2014