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AUIRG4BC30U-S Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR
AUTOMOTIVE GRADE
PD - 96335
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching,
>200 kHz in resonant mode
• Industry standard D2Pak & TO-262 package
• Lead-Free, RoHS Compliant
• Automotive Qualified *
AUIRG4BC30U-S
AUIRG4BC30U-SL
UltraFast Speed IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
Benefits
• Typical Applications: SMPS, PFC
D2Pak
TO-262
AUIRG4BC30U-S AUIRG4BC30U-SL
G
C
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond
those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
23
12
A
92
92
± 20
V
10
mJ
100
42
W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
–––
Junction-to-Ambient, ( PCB Mounted,steady-state)** –––
1.2
°C/W
40
* * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
* Qualification standards can be found at http://www.irf.com/
www.irf.com
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11/01/10