AUIRFZ48Z Datasheet, PDF (1/14 Pages) International Rectifier – AUTOMOTIVE GRADE

PD - 97612A
AUTOMOTIVE GRADE
AUIRFZ48Z
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up
to Tjmax
G
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRFZ48ZS
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
R_DS(on) max. _11mΩ
S
I_D
61A
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
D
D
DS
G
TO-220AB
AUIRFZ48Z
DS
G
D²Pak
AUIRFZ48ZS
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
Maximum Power Dissipation
61
A
43
240
91
W
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.61
± 20
73
120
See Fig.12a,12b,15,16
7.2
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
R_θJC
k Junction-to-Case
Typ.
–––
Max.
1.64
Units
°C/W
R_θCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
R_θJA
Junction-to-Ambient
R_θJA
j Junction-to-Ambient (PCB Mount, steady state)
–––
62
–––
40
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/21/11