AUIRFZ48N Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 97732
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs uti-
lizes the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reli-
able device for use in Automotive and a wide variety of
other applications.
AUIRFZ48N
HEXFET^® Power MOSFET
D
V_(BR)DSS
R_DS(on) typ.
max
S
I_D
55V
11m
14m
69A
D
G
Gate
DS
G
TO-220AB
AUIRFZ48N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise
specified.
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_JC
R_CS
R_JA
Parameter
i Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
69
49
270
160
1.1
± 20
265
290
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.95
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
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