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| AUIRFZ46NS Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance | |||
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AUTOMOTIVE GRADE
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free, RoHS Compliant
l Automotive Qualified *
PD - 96434
AUIRFZ46NS
AUIRFZ46NL
HEXFET® Power MOSFET
D
V(BR)DSS
55V
RDS(on) max. 16.5mΩ
ID(Silicon Limited)
i 53A
S
ID (Package Limited)
39A
Description
Specifically designed for Automotive applications, this
stripe planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
D2Pak
TO-262
AUIRFZ46NS AUIRFZ46NL
applications.
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Âg Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dh Single Pulse Avalanche Energy
ÃÂ Avalanche Current
 Repetitive Avalanche Energy
eg Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
j Junction-to-Ambient (PCB mounted, steady-state)
Max.
53i
37
39
180
3.8
107
0.71
±20
152
28
11
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
âââ
âââ
Max.
1.4
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
04/16/12
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