AUIRFZ44VZS Datasheet, PDF (1/13 Pages) International Rectifier – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
PD - 96354
AUIRFZ44VZS
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET^® Power MOSFET
D
V_(BR)DSS
60V
R_DS(on) typ. 9.6m_Ω
G
max. 12mΩ
S
I_D
57A
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
G
Gate
D
DS
G
D²Pak
AUIRFZ44VZS
D
Drain
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
57
40
A
230
92
W
0.61
W/°C
V_GS
E_AS
E_AS (Tested )
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
± 20
73
110
See Fig.12a, 12b, 15, 16
V
mJ
A
mJ
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
R_θJC
Junction-to-Case
R_θJA
i Junction-to-Ambient (PCB Mount)
–––
1.64
°C/W
–––
40
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/07/11