AUIRFZ44N Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 96378
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRFZ44N
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
G
R_DS(on) max. 17.5m_Ω
S
I_D
49A
D
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
G
Gate
S
D
G
TO-220AB
AUIRFZ44N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
Power Dissipation
Linear Derating Factor
49
35
160
94
0.63
A
W
W/°C
V_GS
E_{AS (Thermally Limited)}
E_AS (tested)
I_AR
E_AR
dv/dt
T_J
T_STG
Gate-to-Source Voltage
h Single Pulse Avalanche Energy
g Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
™ Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
±20
V
150
mJ
530
25
A
9.4
mJ
5.0
-55 to + 175
V/ns
°C
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
Max.
Units
R_θJC
R_θCS
R_θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
1.5
0.50
–––
°C/W
–––
62
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11