AUIRFS8408-7P Datasheet, PDF (1/12 Pages) International Rectifier – HEXFETPower MOSFET

AUTOMOTIVE GRADE
AUIRFS8408-7P
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this product an extremely efficient and
G
reliable device for use in Automotive and wide variety of other
applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l SMPS
Ordering Information
Base part number
Package Type
AUIRFS8408-7P
D²Pak 7 Pin
G
Gate
Standard Pack
Form
Tube
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
0.70mΩ
1.0mΩ
397Ac
240A
D
D
S
D
Drain
S
SS
S
S
G
D²Pak 7 Pin
S
Source
Quantity
50
Complete Part Number
AUIRFS8408-7P
Tape and Reel Left
800
AUIRFS8408-7TRL
Tape and Reel Right
800
AUIRFS8408-7TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Package Limited)
d Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
VGS
Gate-to-Source Voltage
T_J
Operating Junction and
T_{ST G}
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
e ^{Avalanche Characteristics}
EAS (Thermally limited) ^{Single Pulse Avalanche Energy}
EAS (tested)
I_AR
E_AR
e Single Pulse Avalanche Energy Tested Value
d Avalanche Current
Ãd Repetitive Avalanche Energy
Thermal Resistance
Symbol
RqJC
R_qJA
k^Parameter
Junction-to-Case
j Junction-to-Ambient (PCB Mount)
™ ^Max.
397
™ 280
240
l 1300
294
1.96
± 20
-55 to + 175
300
501
809
See Fig. 14, 15, 24a, 24b
Typ.
–––
–––
Max.
0.51
40
Units
A
W
W /°C
V
°C
mJ
A
mJ
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 25 ,2013