AUIRFS8407 Datasheet, PDF (1/14 Pages) International Rectifier – Advanced Process Technology New Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRFB8407
AUIRFS8407
AUIRFSL8407
Features
l Advanced Process Technology
HEXFET^® Power MOSFET
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
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l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
D
V_DSS
40V
R_DS(on)
typ. 1.4mΩ
(SMD version) max 1.8mΩ
c I_{D (Silicon Limited)} 250A
S
I_{D (Package Limited)} 195A
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction ^D
D
D
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
DS
in Automotive applications and wide variety of other
G
S
G
DS
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applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
TO-220AB
AUIRFB8407
G
G a te
D²Pak
AUIRFS8407
D
Drain
TO-262
AUIRFSL8407
S
Source
l Heavy Loads
l DC-DC Applications
Ordering Information
Base part number
Package Type
Standard Pack
Complete Part
Form
Quantity
Number
AUIRFB8407
TO-220
Tube
50
AUIRFB8407
AUIRFSL8407
TO-262
Tube
50
AUIRFSL8407
AUIRFS8407
D2Pak
Tube
50
AUIRFS8407
AUIRFS8407
D2Pak
Tape and Reel Left
800
AUIRFS8407TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
™ ^Max.
250
Units
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
180
A
195
l 1000
P_D @T_C = 25°C Maximum Power Dissipation
230
W
Linear Derating Factor
1.5
W/°C
V_GS
Gate-to-Source Voltage
± 20
V
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
x x 10lbf in (1.1N m)
Avalanche Characteristics
e _{EAS (Thermally limited)} Single Pulse Avalanche Energy
Ãe E_AS (tested)
Ãd _IAR
d E_AR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
350
mJ
500
See Fig. 14, 15, 22a, 22b
A
mJ
1 www.irf.com © 2013 International Rectifier
April 25, 2013