AUIRFS8407-7P Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 New Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
G
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
Applications
 Electric Power Steering (EPS)
 Battery Switch
 Start/Stop Micro Hybrid
 Heavy Loads
 DC-DC Applications
D
S
G
Gate
AUIRFS8407-7P
HEXFET^® Power MOSFET
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
40V
1.0mΩ
1.3mΩ
306A
I_{D (Package Limited)} 240A
D
S
SS
S
S
G
D²Pak 7 Pin
D
D ra in
S
Source
Base part number
Package Type
AUIRFS8407-7P
D2Pak-7PIN
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Orderable Part Number
AUIRFS8407-7P
AUIRFS8407-7TRL
AUIRFS8407-7TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
306
216
A
240
1040
P_D @T_C = 25°C Maximum Power Dissipation
231
W
Linear Derating Factor
1.5
W/°C
V_GS
E_{AS (Thermally limited)}
E_{AS (tested)}
I_AR
E_AR
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Single Pulse Avalanche Energy Tested Value 
Avalanche Current
Repetitive Avalanche Energy 
± 20
V
344
mJ
508
See Fig. 14, 15, 24a, 24b
A
mJ
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2013 International Rectifier
April 30, 2013