AUIRFS8405 Datasheet, PDF (1/14 Pages) International Rectifier – Advanced Process Technology New Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRFS8405
AUIRFSL8405
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
G
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l DC-DC Applications
HEXFET^® Power MOSFET
D
V_DSS
40V
R_DS(on) typ.
1.9mΩ
max.
I_{D (Silicon Limited)}
2.3mΩ
c 193A
S
I_{D (Package Limited)} 120A
D
D
DS
G
D²Pak
AUIRFS8405
GD ^S
TO-262
AUIRFSL8405
G
D
S
Gate
Drain
Source
Base part number
AUIRFSL8405
AUIRFS8405
Package Type
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
800
800
Complete Part Number
AUIRFSL8405
AUIRFS8405
AUIRFS8405TRL
AUIRFS8405TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
193c
137c
120
904
163
1.1
± 20
-55 to + 175
300
x x 10lbf in (1.1N m)
Units
A
W
W/°C
V
°C
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2013 International Rectifier
April 30, 2013