AUIRFS8403 Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Process Technology New Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRFS8403
AUIRFSL8403
Features
HEXFET^® Power MOSFET
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
D
V_DSS
R_DS(on) typ.
max.
S
I_{D (Silicon Limited)}
40V
2.6mΩ
3.3mΩ
123A
D
D
S
G
S
D
G
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l DC-DC Converter
D²Pak
AUIRFS8403
TO-262
AUIRFSL8403
G
Gate
D
Drain
S
Source
Ordering Information
Base part number
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFSL8403
AUIRFS8403
TO-262
D2Pak
Tube
Tube
50
AUIRFSL8403
50
A UIRFS8403
Tape and Reel Left
800
A UIRFS8403TRL
Tape and Reel Right
800
A UIRFS8403TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
IDM
™ ^{Continuous Drain Current, VGS @ 10V (Silicon Limited)}
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IAR
EAR
d Single Pulse Avalanche Energy
j Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
™ Repetitive Avalanche Energy
Thermal Resistance
123
87
492
99
0.66
± 20
-55 to + 175
300
111
160
See Fig. 14, 15 , 24a, 24b
A
W
W/°C
V
°C
mJ
A
mJ
Symbol
R_θJC
RθJA
Parameter
i Junction-to-Case
Junction-to-Ambient (PCB Mount) D2 Pak
Typ.
–––
–––
Max.
1.52
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
May 08 2013