AUIRFS6535 Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Process Technology Low On-Resistance

AUTOMOTIVE GRADE
AUIRFS6535
AUIRFSL6535
Features
● Advanced Process Technology
● Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
G
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
HEXFET^® Power MOSFET
D _V(BR)DSS
R_DS(on) typ.
max.
S _ID
300V
148m
185m
19A
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D
D
DS
G
D²Pak
AUIRFS6535
G
Gate
D
Drain
DS
G
TO-262
AUIRFSL6535
S
Source
Base part
number
Package Type
AUIRFSL6535
AUIRFS6535
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Orderable Part Number
Quantity
50
50
800
800
AUIRFSL6535
AUIRFS6535
AUIRFS6535TRL
AUIRFS6535TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested )
IAR
EAR
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™ Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
RJC
j Junction-to-Case
R_JA
i Junction-to-Ambient (PCB Mount)
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Max.
19
13
100
210
1.4
± 20
216
310
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Typ.
–––
–––
Max.
0.71
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
www.irf.com © 2012 International Rectifier
July 23, 2012