AUIRFS4310Z Datasheet, PDF (1/12 Pages) International Rectifier – HEXFETPower MOSFET

AUTOMOTIVE GRADE
PD - 97715A
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
G
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
AUIRFS4310Z
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
100V
4.8m:
6.0m:
I_{D (Silicon Limited)}
c 127A
S ^ID (Package Limited) ^120A
D
G
Gate
DS
G
D²Pak
AUIRFS4310Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Max.
™ 127
90™
120
560
250
Units
A
W
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally Limited)
Ãd Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
1.7
± 20
130
See Fig. 14, 15, 22a, 22b,
18
-55 to + 175
300
W/°C
V
mJ
A
mJ
V/ns
°C
(1.6mm from case)
Thermal Resistance
Symbol
R_JC
R_JA
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.6
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/10/11