AUIRFS4310 Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET Power MOSFET

AUTOMOTIVE GRADE
PD - 96324
AUIRFS4310
AUIRFSL4310
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
HEXFET^® Power MOSFET
D
V_(BR)DSS
100V
R_DS(on) typ.
5.6mΩ
G
max. 7.0mΩ
I_{D (Silicon Limited)}
130A c
S
I_{D (Package Limited)}
75A
DS
G
D²Pak
AUIRFS4310
DS
G
TO-262
AUIRFSL4310
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless
otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dV/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally limited)
Ãd Avalanche Current
Repetitive Avalanche Energy
f Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
130™
92™
75
550
300
2.0
± 20
980
See Fig. 14, 15, 22a, 22b,
14
-55 to + 175
300 (1.6mm from case)
x x 10lb in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R_θJC
k Junction-to-Case
R_θJA
j Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10