AUIRFS3607 Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Process Technology Low On-Resistance

AUTOMOTIVE GRADE
PD - 96402A
AUIRFS3607
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRFSL3607
HEXFET^® Power MOSFET
D _VDSS
75V
R_DS(on) typ.
7.34m:
G
max.
9.0m:
S I_D
80A
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
D
D
S
G
D²Pak
AUIRFS3607
S
D
G
TO-262
AUIRFSL3607
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A)
is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
E_{AS (Thermally limited)}
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, VGS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery
d Single Pulse Avalanche Energy
Ù Avalanche Current
f Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
80
56
310
140
0.96
± 20
27
120
46
14
-55 to + 175
300(1.6mm from case)
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θJA
i Junction-to-Ambient (PCB Mount) , D²Pak
Typ.
–––
–––
Max.
1.045
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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10/4/11