AUIRFS3004 Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Process Technology Ultra Low On-Resistance

AUTOMOTIVE GRADE
PD - 96400A
AUIRFS3004
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
G
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
AUIRFSL3004
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
40V
1.4mΩ
1.75mΩ
c 340A
S ^ID (Package Limited) ^195A
D
D
S
G
D²Pak
AUIRFS3004
S
D
G
TO-262
AUIRFSL3004
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A)
is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
E_{AS (Thermally limited)}
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
f Peak Diode Recovery
e Single Pulse Avalanche Energy
Ãd Avalanche Current
d Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
™ 340
™ 240
195
1310
380
2.5
± 20
4.4
300
See Fig. 14, 15, 22a, 22b
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C
Thermal Resistance
Parameter
R_θJC
kl Junction-to-Case
R_θJA
j Junction-to-Ambient (PCB Mount) , D²Pak
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
1
10/4/11