AUIRFS3004-7P Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology Ultra Low On-Resistance

AUTOMOTIVE GRADE
PD - 97704A
AUIRFS3004-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
G
● Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications such as
Electric Power Steering, Battery Switch, SMPS and other
heavy loads.
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
40V
0.90m
c ^1.25m
400A
S ^ID (Package Limited) ^240A
D
S
SS
S
S
G
D²Pak 7 Pin
G
Gate
D
D ra in
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
e ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy (Thermally limited)
Ãd Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
R_JC
R_JA
Parameter
kl Junction-to-Case
j Junction-to-Ambient (PCB Mount)
Max.
™ 400
™ 280
240
1610
380
2.5
± 20
290
See Fig. 14, 15, 22a, 22b
2.0
-55 to + 175
300
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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11/29/11