AUIRFR8405 Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Process Technology, New Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRFR8405
AUIRFU8405
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
for use in Automotive applications and wide variety of other applications.
Applications
G
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l DC-DC Converter
Ordering Information
Base part
Package Type
AUIRFR8405
DPak
AUIRFU8405
IPak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
HEXFET^® Power MOSFET
V_DSS
40V
R_DS(on) typ.
1.65mΩ
max.
I_{D (Silicon Limited)}
1.98mΩ
c 211A
I_{D (Package Limited)} 100A
D
D
D
S
G
Gate
Quantity
75
2000
3000
3000
75
S
G
D-Pak
AUIRFR8405
D
D r a in
S
D
G
I-Pak
AUIRFU8405
S
Source
Complete Part Number
AUIRFR8405
AUIRFR8405TR
AUIRFR8405TRL
AUIRFR8405TRR
AUIRFU8405
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
™ ^Max.
211
™ 150
100
l 804
Units
A
P_D @T_C = 25°C Maximum Power Dissipation
163
W
Linear Derating Factor
1.1
W/°C
V_GS
Gate-to-Source Voltage
± 20
V
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
E_{AS (Thermally limited)}
E_{AS (tested)}
I_AR
E_AR
e Single Pulse Avalanche Energy
e Single Pulse Avalanche Energy Tested Value
Ãd Avalanche Current
d Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
kl Junction-to-Case
j Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
208
256
See Fig. 14, 15, 24a, 24b
Typ.
–––
–––
–––
Max.
0.92
50
110
mJ
A
mJ
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 30, 2013