AUIRFR8401 Datasheet, PDF (1/14 Pages) International Rectifier – Advanced Process Technology New Ultra Low On-Resistance

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 New Ultra Low On-Resistance
175°C Operating Temperature
 Fast Switching
G
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
AUIRFR8401
AUIRFU8401
HEXFET^® Power MOSFET
D
V_DSS
40V
R_{DS(on) typ.}
3.2m
max
4.25m
I_{D (Silicon Limited)}
100A
S
I_{D (Package Limited)}
100A
Description
Specifically designed for Automotive applications, this HEXFET^® Power
MOSFETs utilizes the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other applications.
D-Pak
AUIRFR8401
I-Pak
AUIRFU8401
Applications
Electric Power Steering (EPS)
 Battery Switch
 Start /Stop Micro Hybrid
 Heavy Loads
DC-DC Converter
G
Gate
D
Drain
S
Source
Ordering Information
Base part number Package Type
AIRFR8401
D^-Pak
AUIRFU8401
I-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
3000
Tube
75
Complete Part Number
AUIRFR8401
AUIRFR8401TR
AUIRFR8401TRL
AUIRFR8401TRR
AUIRFU8401
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation 
Linear Derating Factor 
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
100
71
100
400
79
0.53
± 20
-55 to + 175
Units
A
W
W/°C
V
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
May 06, 2013