AUIRFR4620 Datasheet, PDF (1/12 Pages) International Rectifier – Specifically designed for Automotive applications

AUTOMOTIVE GRADE
PD - 97681
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
G
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
AUIRFR4620
HEXFET^® Power MOSFET
D
V_DSS
200V
R_DS(on) typ.
64m:
max. 78m:
S ^ID
24A
D
G
Gate
S
G
D-Pak
AUIRFR4620
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
d ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy (Thermally limited)
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Max.
24
17
100
144
0.96
± 20
113
See Fig. 14, 15, 22a, 22b,
54
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
j Junction-to-Case
i Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/10/11