AUIRFR4615 Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Process Technology Low On-Resistance

AUTOMOTIVE GRADE
PD -96398A
AUIRFR4615
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRFU4615
HEXFET^® Power MOSFET
D
V_DSS
150V
R_DS(on) typ.
34m:
G
max. 42m:
S
I_D
33A
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
D
D
G
Gate
S
G
DPak
AUIRFR4615
S
D
G
IPAK
AUIRFU4615
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_{AS (Thermally limited)}
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
d ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
33
24
140
144
0.96
± 20
109
See Fig. 14, 15, 22a, 22b,
38
-55 to + 175
300(1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θJA
i Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/04/11