AUIRFR3806 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFETPower MOSFET

PD - 97644
AUTOMOTIVE GRADE
AUIRFR3806
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
G
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S ^ID
60V
12.6mΩ
15.8mΩ
43A
D
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
G
Gate
S
G
D-Pak
AUIRFR3806
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, VGS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
f Repetitive Avalanche Energy
e Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
43
31
170
71
0.47
± 20
73
25
7.1
24
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
R_θJA
Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
2.12
–––
62
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/11/11