AUIRFR2905Z Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 96320
AUTOMOTIVE GRADE _AUIRFR2905Z
HEXFET^® Power MOSFET
Features
D
V_(BR)DSS
55V
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
G
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET^®
R_DS(on) typ. 11.1m_Ω
max. 14.5mΩ
I_{D (Silicon Limited)}
S
59A k
I_{D (Package Limited)}
42A
D
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
S
D
G
D-Pak
AUIRFR2905Z
applications and a wide variety of other applications.
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
Max.
59 k
42k
42
240
110
0.72
Units
A
W
W/°C
V_GS
E_AS
E_AS (Tested )
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy(Thermally limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
± 20
55
82
See Fig.12a, 12b, 15, 16
V
mJ
A
mJ
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
-55 to + 175
°C
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Thermal Resistance
Parameter
R_θJC
R_θJA
j Junction-to-Case
i Junction-to-Ambient (PCB mount)
Typ.
–––
–––
Max.
1.38
50
Units
°C/W
R_θJA
Junction-to-Ambient
HEXFET^® is a registered trademark of International Rectifier.
–––
110
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10