AUIRFR2405 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

Features
l Advanced Planar Technology
● Dynamic dV/dT Rating
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
PD - 97688A
AUIRFR2405
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
R_DS(on) typ.
11.8mΩ
max
16mΩ
G
I_{D (Silicon Limited)}
h 56A
S
I_{D (Package Limited)}
30A
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This ben-
efit combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
G
Gate
S
G
D-Pak
AUIRFR2405
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
I_DM
c Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θJA
i Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Max.
56h
40h
30
220
110
0.71
± 20
130
34
11
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/30/11