AUIRFR120Z Datasheet, PDF (1/14 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 96345
AUIRFR120Z
AUTOMOTIVE MOSFET
AUIRFU120Z
Features
l Advanced Process Technology
HEXFET^® Power MOSFET
D
V_(BR)DSS
100V
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
R_DS(on) typ. 150m_Ω
G
max. 190mΩ
S
I_D
8.7A
l Automotive Qualified *
Description
D
D
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
S
D
G
D-Pak
AUIRFR120Z
S
D
G
I-Pak
AUIRFU120Z
reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
8.7
6.1
A
35
35
W
0.23
W/°C
V_GS
E_AS
E_AS (Tested )
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy(Thermally limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
± 20
18
20
See Fig.12a, 12b, 15, 16
V
mJ
A
mJ
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
Max.
Units
R_θJC
R_θJA
Junction-to-Case
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
HEXFET^® is a registered trademark of International Rectifier.
–––
4.28
–––
50
°C/W
–––
110
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10