AUIRFR1018E Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology Ultra Low On-Resistance

AUTOMOTIVE GRADE
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
● Lead-Free, RoHS Compliant
● Automotive Qualified *
PD - 97685
AUIRFR1018E
HEXFET^® Power MOSFET
D V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
60V
7.1m:
c ^8.4m:
79A
S I_{D (Package Limited)}
56A
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
G
Gate
D
S
G
D-Pak
AUIRFR1018E
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Max.
79c
56c
56
315
110
Units
A
W
Linear Derating Factor
0.76
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
e ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy (Thermally limited)
d Avalanche Current
e Repetitive Avalanche Energy
f Peak Diode Recovery
± 20
88
47
11
21
V
mJ
A
mJ
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
°C
300
(1.6mm from case)
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.32
50
110
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/17/11