AUIRFR1010Z Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
PD - 97683
Features
● Advanced Process Technology
● Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
G
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
AUIRFR1010Z
HEXFET^® Power MOSFET
D _VDSS
55V
R_DS(on) typ.
5.8mΩ
max. 7.5mΩ
I_{D (Silicon Limited)}
91A
S
I_{D (Package Limited)}
42A
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Gate
D
S
G
D-Pak
AUIRFR1010Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
Linear Derating Factor
d ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy (Thermally limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
R_θJC
R_θJA
j Junction-to-Case
Parameter
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Max.
91
65
42
360
140
0.9
± 20
110
220
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.11
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/16/11