AUIRFP4409 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized device de-
sign that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for
use in Automotive and a wide variety of other applications.
G
Gate
Ordering Information
Base part number Package Type
Standard Pack
Form
Quantity
AUIRFP4409
TO-247AC
Tube
25
AUIRFP4409
HEXFET^® Power MOSFET
V_DSS
R_{DS(on) typ.}
max
I_D
300V
56m
69m
38A
S
D
G
TO-247AC
D
Drain
S
Source
Complete Part Number
AUIRFP4409
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_{AS (Thermally limited)}
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_JC
Junction-to-Case 
R_CS
Case-to-Sink, Flat Greased Surface
R_JA
Junction-to-Ambient 
Max.
38
27
152
341
2.3
± 20
541
-55 to + 175
300
10 lbf·in (1.1 N·m)
Typ.
–––
0.24
–––
Max.
0.44
–––
40
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
July 10, 2013