AUIRFP4110 Datasheet, PDF (1/10 Pages) International Rectifier – Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRFP4110
Features
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET^® Power MOSFET
D
V_DSS
100V
R_{DS(on) typ.}
3.7m
max
4.5m
G
I_{D (Silicon Limited)}
180A
S
I_{D (Package Limited)}
120A
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
G
Gate
Ordering Information
Base part number Package Type
AUIRFP4110
TO-247AC
Standard Pack
Form
Quantity
Tube
25
S
D
G
TO-247AC
D
Drain
S
Source
Complete Part Number
AUIRFP4110
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
180
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
130
A
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Package Limited)
120
I_DM
P_D @T_C = 25°C
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
670
370
W
2.5
W/°C
V_GS
Gate-to-Source Voltage
E_{AS (Thermally limited)} Single Pulse Avalanche Energy 
± 20
V
190
mJ
I_AR
E_AR
dv/dt
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
108
A
37
mJ
5.3
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R_JC
Junction-to-Case 
R_CS
Case-to-Sink, Flat Greased Surface
R_JA
Junction-to-Ambient 
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Typ.
–––
0.24
–––
Max.
0.402
–––
40
Units
°C/W
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January 29, 2014