AUIRFP2907Z Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

PD - 97550
AUIRFP2907Z
AUTOMOTIVE GRADE
HEXFET^® Power MOSFET
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
G
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
D
S
G
Gate
V_(BR)DSS
R_DS(on) max.
I_D
75V
4.5mΩ
170A
D
S
D
G
TO-247AC
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V
I_DM
c Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
170
A
120
680
310
W
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
2.0
± 20
520
690
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
R_θJC
R_θCS
R_θJA
j Junction-to-Case
Parameter
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/13/2010